IRG4PSH71KDPBF International Rectifier, IRG4PSH71KDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PSH71KDPBF
• Description: IGBT W/DIODE 1200V 78A SUPER247
• Manufacturer: International Rectifier

Specifications of IRG4PSH71KDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 42A
• Current - Collector (ic) (max): 78A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 78A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PSH71KDPBF

IRG4PSH71KD
Switching Characteristics @ T
Electrical Characteristics @ T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
V
E
V
fe
(BR)CES
CE(on)
GE(th)
on
FM
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
25
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5770
1400 2100
2.97
3.44
2.60
5.68
3.23
8.90 11.6
13.7
410
145
230
130
370
290
400
100
107
160
680 1020
250
320
1.1
-12
2.5
2.4
38
47
67
84
65
87
13
10
16
—
—
—
—
—
—
±100
500
610
220
350
190
160
240
3.9
6.0
3.7
10
70
15
24
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
mA
µA
nA
mJ
mJ
V
nC
nH
nC
ns
pF
V
V
S
µs
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
CC
GE
GE
GE
CC
= 42A, T
= 42A, T
= 42A, V
= 42A, V
= 42A
= 78A
= 42A
= 42A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 720V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
C
See Fig.
See Fig.
= 150°C
= 150°C
Conditions
Conditions
= 250µA
= 10mA
See Fig.
See Fig.
G
G
G
= 250µA
= 1.5mA
= 42A
J
= 800V
= 800V
= 1200V
= 1200V, T
= 5.0
= 125°C
= 5.0
= 5.0
14
15
17
16
See Fig.8
See Fig. 11,18
See Fig. 7
www.irf.com
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
GE
R
I
J
F
= 150°C
= 200V
= 42A
= 15V