IXBT32N300 IXYS, IXBT32N300 Datasheet - Page 3

• Manufacturer Part Number: IXBT32N300
• Description: IGBT 3000V 80A 400W TO268
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBT32N300

• Voltage - Collector Emitter Breakdown (max): 3000V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 32A
• Current - Collector (ic) (max): 80A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 80
• Ic90, Tc=90°c, (a): -
• Ic110, Tc=110°c, (a): 32
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 720
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
65
60
55
50
45
40
35
30
25
20
15
10
65
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
5
0.5
7
0.5
Fig. 5. Collector-to-Emitter Voltage
1.0
9
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
1.0
1.5
11
I
C
= 64A
1.5
32A
16A
2.0
13
V
V
V
@ 125ºC
@ 25ºC
GE
CE
CE
2.5
2.0
15
- Volts
- Volts
- Volts
V
3.0
V
17
GE
GE
2.5
= 25V
= 25V
15V
20V
15V
20V
3.5
19
3.0
T
4.0
J
21
10V
5V
10V
5V
= 25ºC
3.5
4.5
23
5.0
4.0
25
500
450
400
350
300
250
200
150
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
90
80
70
60
50
40
30
20
10
50
0
0
3.5
-50
0
4.0
V
Fig. 2. Extended Output Characteristics
GE
2
-25
= 15V
4.5
Fig. 4. Dependence of V
4
0
Fig. 6. Input Admittance
5.0
Junction Temperature
T
6
T
J
V
J
5.5
GE
= 125ºC
- Degrees Centigrade
25
- 40ºC
= 25V
25ºC
8
V
V
@ 25ºC
6.0
GE
CE
10
50
- Volts
- Volts
6.5
I
C
12
= 64A
75
7.0
10V
20V
15V
5V
I
C
IXBT32N300
IXBH32N300
CE(sat)
14
= 32A
7.5
I
100
C
= 16A
16
8.0
IXYS REF: B_32N300(8P)03-02-09
on
125
8.5
18
9.0
150
20