HGTD1N120BNS9A Fairchild Semiconductor, HGTD1N120BNS9A Datasheet - Page 4

• Manufacturer Part Number: HGTD1N120BNS9A
• Description: IGBT NPT N-CH 1200V 5.3A TO252AA
• Manufacturer: Fairchild Semiconductor

Specifications of HGTD1N120BNS9A

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 1A
• Current - Collector (ic) (max): 5.3A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
1200
1000
300
200
100
800
600
400
200
6
5
4
3
2
1
0
10
5
0
0
0.5
0.5
P
T
f
f
R
R
MAX1
MAX2
J
C
ØJC
G
= 150
= CONDUCTION DISSIPATION
= 82Ω, L = 4mH, V
EMITTER CURRENT
T
EMITTER CURRENT
V
I
(DUTY FACTOR = 50%)
C
I
CE
CE
= 2.1
CE
= 0.05 / (t
= (P
= -55
o
2
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER VOLTAGE (V)
C, R
, COLLECTOR TO EMITTER CURRENT (A)
1
D
o
C/W, SEE NOTES
- P
o
G
C
T
T
J
J
C
= 82Ω, L = 4mH, V
d(OFF)I
) / (E
= 150
= 150
1.0
4
ON2
CE
1.5
T
o
o
C
+ t
C, V
C, V
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
= 960V
T
T
= 75
d(ON)I
+ E
J
J
GE
GE
= 25
= 25
OFF
o
IDEAL DIODE
= 13V
= 15V
C, VGE = 15V
)
o
o
)
T
C, V
C, V
CE
6
C
2
= 25
= 960V
GE
GE
(Unless Otherwise Specified) (Continued)
= 13V
= 15V
o
T
C
C
2.0
= 150
110
110
2.5
8
75
75
T
GE
C
o
o
o
o
o
C
C 13V
C
C 13V
C
= 13V
15V
15V
V
GE
3.0
10
3
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
250
200
150
100
20
18
16
14
12
10
6
5
4
3
2
1
0
50
0
0
13
0.5
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
V
T
R
CE
J
G
T
= 150
C
= 82Ω, L = 4mH, V
= 840V, R
EMITTER CURRENT
V
V
= -55
I
CE
GE
CE
o
2
13.5
, COLLECTOR TO EMITTER VOLTAGE (V)
, GATE TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
C, V
1
o
I
t
SC
C
SC
GE
G
= 82Ω, T
= 13V OR 15V
4
CE
1.5
14
J
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
= 960V
= 125
HGTD1N120BNS, HGTP1N120BN Rev. B
T
J
o
= 25
C
T
6
C
2
o
= 25
14.5
C, V
o
GE
C
T
= 13V OR 15V
C
8
2.5
= 150
GE
15
= 15V
o
20
18
16
14
12
10
C
10
3