FGP5N60LS Fairchild Semiconductor, FGP5N60LS Datasheet

IGBT 600V 10A 83W TO220

FGP5N60LS

Manufacturer Part Number
FGP5N60LS
Description
IGBT 600V 10A 83W TO220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGP5N60LS

Igbt Type
Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3.2V @ 12V, 14A
Current - Collector (ic) (max)
10A
Power - Max
83W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
10 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
83 W
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
10A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGP5N60LS
Manufacturer:
FAIRCHILD
Quantity:
23 970
Part Number:
FGP5N60LS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. A1
Absolute Maximum Ratings
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.2, V
Thermal Characteristics
FGP5N60LS
600V, 5A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• RoHS Compliant
Applications
• HID ballast and Wall dimmer
V
V
I
I
P
T
T
T
R
R
C
CM (1)
stg
J
L
CES
GES
D
JC
JA
Symbol
Symbol
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G C E
CE(sat)
=1.7V @ I
TO-220
Description
GE
Parameter
=13.5V
C
= 5A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 25
= 25
= 100
General Description
Using novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for HID bal-
last where low conduction losses are essential.
o
o
o
C
C
C
o
o
C
C
Typ.
G
-
-
-55 to +150
-55 to +150
Ratings
600
20
300
10
36
83
33
5
C
E
Max.
62.5
1.5
February 2010
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGP5N60LS Summary of contents

Page 1

... Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FGP5N60LS Rev. A1 General Description Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID bal last where low conduction losses are essential. ...

Page 2

... Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGP5N60LS Rev. A1 Packaging Package Type Qty per Tube TT220 Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250 0V 250 ...

Page 3

... Common Emitter V = 15V 125 Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter V = 15V GE 2.5 2.0 1.5 1 Collector-EmitterCase Temperature, T FGP5N60LS Rev. A1 Figure 2. Typical Output Characteristics 40 12V 30 10V [V] CE Figure 4. Transfer Characteristics [V] CE Figure 6. Saturation Voltage vs 10A 2.5A C ...

Page 4

... C res 100 0 1 Collector-Emitter Voltage, V Figure 11. SOA Characteristics 100 10 1 Single Nonrepetitive 0.1 o Pulse Curves must be derated linearly with increase in temperature 0.01 0 Collector-Emitter Voltage, V FGP5N60LS Rev. A1 Figure 8. Saturation Voltage vs Common Emitter [V] GE Figure 10. Gate charge Characteristics 15 Common Emitter 1MHz ...

Page 5

... 125 C C 100 Collector Current, I Figure 17. Switching Loss vs. Collector Current 1000 Common Emitter  15V 125 C C 100 Collector Current, I FGP5N60LS Rev. A1 Figure 14. Turn-on Characteristics vs d(off) 1 Common Emitter V = 400V 15V 125  Figure 16. Switching Loss vs. Gate Resistance 1000 t f 100 ...

Page 6

... Typical Performance Characteristics 2 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0. FGP5N60LS Rev. A1 Figure 19.Transient Thermal Impedance of IGBT - Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FGP5N60LS Rev. A1 TO-220AB 7 www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGP5N60LS Rev. A1 ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ® Green FPS™ e-Series™ ...

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