HGT1S7N60C3DS9A Fairchild Semiconductor, HGT1S7N60C3DS9A Datasheet

HGT1S7N60C3DS9A

Manufacturer Part Number

HGT1S7N60C3DS9A

Description

IGBT UFS N-CH 600V 14A TO-263AB

Manufacturer

Fairchild Semiconductor

Datasheet

1.HGT1S7N60C3DS9A.pdf (9 pages)

Specifications of HGT1S7N60C3DS9A

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

2V @ 15V, 7A

Current - Collector (ic) (max)

14A

Power - Max

60W

Input Type

Standard

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HGT1S7N60C3DS9A

Manufacturer:

FSC

Quantity:

2 400

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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D

Rev. B 1

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description

The

HGT1S7N60C3D are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25

IGBT used is developmental type TA49115. The diode

used in anti-parallel with the IGBT is developmental type

TA49057.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49121.

COLLECTOR

(FLANGE)

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

COLLECTOR (FLANGE)

HGTP7N60C3D,

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

JEDEC TO-220AB

JEDEC TO-262

HGT1S7N60C3DS

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

EMITTER

GATE

C and 150

COLLECTOR

GATE

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

C. The

COLLECTOR

and

Features

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

14A, 600V at T

600V Switching SOA Capability

Typical Fall Time...................140ns at T

Short Circuit Rating

Low Conduction Loss

Hyperfast Anti-Parallel Diode

EMITTER

GATE

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

= 25

JEDEC TO-263AB

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

September 2005

www.fairchildsemi.com

COLLECTOR

(FLANGE)

= 150

4,587,713

4,644,637

4,801,986

4,883,767

Related parts for HGT1S7N60C3DS9A

HGT1S7N60C3DS9A Summary of contents

Page 1

... Formerly Developmental Type TA49121. JEDEC TO-220AB COLLECTOR (FLANGE) JEDEC TO-262 EMITTER COLLECTOR (FLANGE) FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,598,461 4,605,948 4,620,211 4,682,195 4,684,413 ...

Page 2

... Thermal Resistance Diode Package Marking and Ordering Information Part Number HGTP7N60C3D HGT1S7N60C3DS HGT1S7N60C3D NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev 25°C unless otherwise noted A ...

Page 3

Electrical Characteristics Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage I CES I Collector to Emitter Leakage Current CES I Gate-Emitter Leakage Current GES V Collector to Emitter Saturation Voltage CE(SAT) On Characteristics V Gate-Emitter Threshold Voltage GE(TH) ...

Page 4

Typical Performance Curves 40 DUTY CYCLE <0.5 10V CE PULSE DURATION = 250µ 150 - ...

Page 5

Typical Performance Curves 150 50Ω 1mH CE(PK 10V 15V COLLECTOR TO ...

Page 6

Typical Performance Curves 200 T 100 10V 0.05/( MAX1 D(OFF)I D(ON )/( MAX2 OFF P = ALLOWABLE DISSIPATION D ...

Page 7

Typical Performance Curves 100 C 175 1.0 0.5 0 0.5 1.0 1 FORWARD VOLTAGE (V) EC Figure 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP Test Circuit and Waveforms L ...

Page 8

Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST Build it Now™ FASTr™ ...

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