ISL9V3036D3ST Fairchild Semiconductor, ISL9V3036D3ST Datasheet - Page 5

• Manufacturer Part Number: ISL9V3036D3ST
• Description: IGBT N-CHAN 360V 300MJ TO-252AA
• Manufacturer: Fairchild Semiconductor
• Series: EcoSPARK™r

Specifications of ISL9V3036D3ST

• Voltage - Collector Emitter Breakdown (max): 360V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 4V, 6A
• Current - Collector (ic) (max): 21A
• Power - Max: 150W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Electronic Ignition Drivers
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 13. Capacitance vs Collector to Emitter
1600
1200
800
400
0
375
370
365
360
355
350
345
340
335
10
10
10
0
-1
-2
0
10
10
-5
0.2
0.05
0.5
0.1
I
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
CER
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
= 10mA
5
C
C
SINGLE PULSE
IES
RES
Voltage
0.02
0.01
Figure 15. Breakdown Voltage vs Series Gate Resistance
10
C
OES
10
-4
15
FREQUENCY = 1 MHz
100
(Continued)
20
T
1
R
, RECTANGULAR PULSE DURATION (s)
G
, SERIES GATE RESISTANCE ( )
10
-3
25
8
7
6
5
4
3
2
1
0
0
I
G(REF)
10
-2
4
V
Figure 14. Gate Charge
T
= 1mA, R
CE
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
J
= 175°C
= 12V
1K
8
DUTY FACTOR, D = t
PEAK T
V
L
CE
= 1.25
Q
12
= 6V
G
T
, GATE CHARGE (nC)
J
J
= - 40°C
P
= (P
D
16
T
T
J
10
J
D
= 25°C
= 25°C
-1
X Z
20
t
1
JC
t
2
1
/ t
X R
24
2
JC
) + T
28
C
10K
10
32
0