HGTP7N60C3D Fairchild Semiconductor, HGTP7N60C3D Datasheet - Page 8

• Manufacturer Part Number: HGTP7N60C3D
• Description: IGBT UFS N-CH 600V 14A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP7N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 7A
• Current - Collector (ic) (max): 14A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B 1
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting springs
or by the insertion into conductive material such as
When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable means
- for example, with a metallic wristband.
Tips of soldering irons should be grounded.
Devices should never be inserted into or removed from
circuits with power on.
Gate Voltage Rating - Never exceed the gate-voltage rating
of V
damage to the oxide layer in the gate region.
Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions can
result in turn-on of the device due to voltage buildup on the
input capacitor due to leakage currents or pickup.
Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
ECCOSORBD™ LD26 or equivalent.
GEM
. Exceeding the rated V
GE
can result in permanent
8
Operating Frequency Information
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
(the denominator) has been arbitrarily held to 10% of the
on-state time for a 50% duty factor. Other definitions are
possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
important when controlling output ripple under a lightly
loaded condition.
f
allowable dissipation (P
The sum of device switching and conduction losses must
not exceed P
and the conduction losses (P
P
E
shown in Figure 21. E
power loss (I
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for E
collector current equals zero (I
MAX2
MAX1
C
ON
= (V
and E
is defined by f
is defined by f
CE
d(OFF)I
x I
OFF
CE
D
CE
MAX1
. A 50% duty factor was used (Figure 13)
)/2.
are defined in the switching waveforms
and t
x V
MAX1
or f
MAX2
CE
ON
d(ON)I
D
) is defined by P
) during turn-on and E
MAX2
= 0.05/(t
is the integral of the instantaneous
= (P
are defined in Figure 21.
whichever is smaller at each
CE
CE
D
d(OFF)I
C
= 0).
- P
) plots are possible using
) are approximated by
C
)/(E
D
+ t
= (T
www.fairchildsemi.com
OFF
d(ON)I
JM
JM
+ E
OFF
). Deadtime
OFF
- T
. t
ON
d(OFF)I
; i.e. the
C
)/R
). The
is the
θJC
is
.