ISL9V3036D3S Fairchild Semiconductor, ISL9V3036D3S Datasheet

no-image

ISL9V3036D3S

Manufacturer Part Number
ISL9V3036D3S
Description
IGBT N-CHAN 360V 300MJ TO-252AA
Manufacturer
Fairchild Semiconductor
Series
EcoSPARK™r
Datasheet

Specifications of ISL9V3036D3S

Voltage - Collector Emitter Breakdown (max)
360V
Vce(on) (max) @ Vge, Ic
1.6V @ 4V, 6A
Current - Collector (ic) (max)
21A
Power - Max
150W
Input Type
Logic
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Electronic Ignition Drivers
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
G
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
EcoSPARK
General Description
The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the
next generation IGBTs that offer outstanding SCIS capability in the
space saving D-Pak (TO-252), as well as the industry standard D²-
Pak (TO-263) and TO-220 plastic packages. These devices are
intended for use in automotive ignition circuits, specifically as a coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49442
Device Maximum Ratings
Package
JEDEC TO-252AA
E
E
Symbol
E
BV
BV
SCIS150
V
I
T
SCIS25
ESD
T
I
C110
C25
GEM
P
D-Pak
T
STG
T
pkg
COLLECTOR
CER
ECS
D
J
L
(FLANGE)
Collector to Emitter Breakdown Voltage (I
Emitter to Collector Voltage - Reverse Battery Condition (I
T
T
Collector Current Continuous, At T
Collector Current Continuous, At T
Gate to Emitter Voltage Continuous
Power Dissipation Total T
Power Dissipation Derating T
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
G
J
J
TM
E
= 25°C, I
= 150°C, I
JEDEC TO-263AB
300mJ, 360V, N-Channel Ignition IGBT
D²-Pak
SCIS
SCIS
COLLECTOR
(FLANGE)
= 14.2A, L = 3.0 mHy
= 10.6A, L = 3.0 mHy
C
T
= 25°C
J
JEDEC TO-220AB
= 25°C unless otherwise noted
C
> 25°C
Parameter
C
C
= 25°C, See Fig 9
= 110°C, See Fig 9
C
= 1 mA)
Symbol
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Industry Standard D
• SCIS Energy = 300mJ at T
• Logic Level Gate Drive
E
C
G
C
= 10 mA)
GATE
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
2
-Pak package
R
R
J
1
2
= 25
-40 to 175
-40 to 175
o
Ratings
C
360
300
170
±10
150
300
260
1.0
24
21
17
4
EMITTER
COLLECTOR
October 2004
Units
W/°C
mJ
mJ
°C
°C
°C
°C
kV
W
V
V
V
A
A

Related parts for ISL9V3036D3S

ISL9V3036D3S Summary of contents

Page 1

... See Fig 110°C, See Fig 25°C C > 25°C C October 2004 2 -Pak package COLLECTOR EMITTER Ratings Units 360 300 mJ 170 ±10 V 150 W 1.0 W/°C -40 to 175 °C -40 to 175 °C 300 °C 260 ° ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004 ...

Page 2

... N/A 75 N/A 50 Min Typ Max Units 330 360 390 V 350 380 410 ±12 ± µ 10K - 26K - 1.25 1. 1.58 1. 1.90 2. 1.3 - 2.2 V 0. 0.7 4 µs - 2.1 7 µs - 4.8 15 µs - 2.8 15 µ 300 1.0 °C/W ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004 ...

Page 3

... Voltages of <390V clamp INDUCTANCE (mHy) Current vs Inductance = 10A 8.0V GE -50 - 100 125 150 T , JUNCTION TEMPERATURE (°C) J Junction Temperature = 25°C J 1.0 2.0 3 COLLECTOR TO EMITTER VOLTAGE (V) CE Collector Current ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004 = 14V 10 175 4.0 ...

Page 4

... -40°C J 1.5 2.0 2.5 3.0 3.5 4 GATE TO EMITTER VOLTAGE ( 1mA CE - 100 125 T JUNCTION TEMPERATURE (°C) J Temperature = 6.5A 5V Resistive t OFF Inductive t Resistive 100 125 150 T , JUNCTION TEMPERATURE (°C) J Temperature ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004 4.5 GE 150 175 OFF ON 175 ...

Page 5

... Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case ©2004 Fairchild Semiconductor Corporation (Continued FREQUENCY = 1 MHz G(REF 100 R , SERIES GATE RESISTANCE ( ) RECTANGULAR PULSE DURATION ( 1mA 1. 25° 12V GATE CHARGE (nC) G Figure 14. Gate Charge 40° 25° 175° DUTY FACTOR PEAK ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004 32 10K 0 10 ...

Page 6

... Figure 17. Inductive Switching Test Circuit VARY t TO OBTAIN P R REQUIRED PEAK Figure 19. Unclamped Energy Test Circuit ©2004 Fairchild Semiconductor Corporation Figure 18 DUT 0.01 Figure 20. Unclamped Energy Waveforms R or LOAD DUT - E and t Switching Test Circuit ON OFF BV CES ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004 ...

Page 7

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

Related keywords