HGTP12N60C3 Fairchild Semiconductor, HGTP12N60C3 Datasheet

IGBT SMPS N-CH 600V 24A TO-220AB

HGTP12N60C3

Manufacturer Part Number
HGTP12N60C3
Description
IGBT SMPS N-CH 600V 24A TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTP12N60C3

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 12A
Current - Collector (ic) (max)
24A
Power - Max
104W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
24 A
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
104 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
24 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTP12N60C3
Manufacturer:
HARIS
Quantity:
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Part Number:
HGTP12N60C3
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
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Part Number:
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Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
24A, 600V, UFS Series N-Channel IGBTs
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49123.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.
Symbol
HGTP12N60C3
HGT1S12N60C3S
PART NUMBER
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
o
C.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
TO-220AB
TO-263AB
G
PACKAGE
C
E
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
P12N60C3
S12N60C3
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
o
C
HGTP12N60C3, HGT1S12N60C3S
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• 24A, 600V at T
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T
• Short Circuit Rating
• Low Conduction Loss
Packaging
COLLECTOR
December 2001
(FLANGE)
EMITTER
GATE
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
C
= 25
JEDEC TO-220AB
JEDEC TO-263AB
o
C
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
HGTP12N60C3, HGT1S12N60C3S Rev. B
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
4,587,713
4,644,637
4,801,986
4,883,767
J
= 150
o
C

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HGTP12N60C3 Summary of contents

Page 1

... Data Sheet 24A, 600V, UFS Series N-Channel IGBTs The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower ...

Page 2

... CES 150 C, d(ON C110 0.8 BV CE(PK) CES, t d(OFF 15V 100 OFF 0A). The HGTP12N60C3 and HGT1S12N60C3S were tested per JEDEC standard CE HGTP12N60C3, HGT1S12N60C3S 600 CES 24 C25 12 C110 GES 30 GEM 24A at 600V 104 D 0.83 100 ARV , T -40 to 150 J STG 260 MIN TYP 600 - ...

Page 3

... COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 2. SATURATION CHARACTERISTICS 80 PULSE DURATION = 250 s 70 DUTY CYCLE <0.5 15V - COLLECTOR TO EMITTER VOLTAGE ( 360V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME HGTP12N60C3, HGT1S12N60C3S Rev 10.0V 9.0V 8.5V 8.0V 7.5V 7. 150 140 120 100 ...

Page 4

... COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 300 150 100mH CE(PK) 200 V = 10V or 15V GE 100 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 3 150 100 CE(PK) 2.5 2.0 1 10V or 15V GE 1.0 0 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTP12N60C3, HGT1S12N60C3S Rev 480V V = 15V 480V 480V 25 30 ...

Page 5

... LIMITED BY CIRCUIT 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE (V) CE(PK) FIGURE 14. SWITCHING SAFE OPERATING AREA I = 1.276mA G(REF) L 600 480 V = 600V CE 360 240 V = 400V 200V CE 120 GATE CHARGE (nC) G FIGURE 16. GATE CHARGE WAVEFORMS P D DUTY FACTOR PEAK HGTP12N60C3, HGT1S12N60C3S Rev. B 500 600 ...

Page 6

... Figure 19. D(OFF)I D(ON )/( MAX2 D C OFF ) is defined 50% duty factor was used (Figure 13) and the D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and OFF HGTP12N60C3, HGT1S12N60C3S Rev D(ON D(OFF)I ). The )/ the ) during CE = 0). ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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