FGA15N120ANTDTU_F109 Fairchild Semiconductor, FGA15N120ANTDTU_F109 Datasheet - Page 6

• Manufacturer Part Number: FGA15N120ANTDTU_F109
• Description: IGBT NPT 15A 1200V TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA15N120ANTDTU_F109

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 186W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
Typical Performance Characteristics
Figure 13. Gate Charge Characteristics
Figure 15. Turn-Off SOA
100
15
12
10
9
6
3
0
1
0
Common Emitter
R
T
L
C
= 40
= 25
Ω
o
C
20
Vcc = 200V
Collector-Emitter Voltage, V
10
1E-3
Gate Charge, Q
0.01
40
0.1
10
1
1E-5
Safe Operating Area
V
GE
= 15V, T
60
0.2
0.1
0.05
0.02
0.01
0.5
Figure 16. Transient Thermal Impedance of IGBT
100
g
C
[nC]
single pulse
= 125
80
400V
1E-4
CE
600V
o
C
[V]
100
1000
120
1E-3
Rectangular Pulse Duration [sec]
(Continued)
6
0.01
0 .0 1
10 0
0.1
1 0
1
0.1
Ic M A X (P u lse d)
Ic M A X (C o n tinu o us )
0.1
Figure 14. SOA Characteristics
S in g le N on re p etitive
P u lse T c = 25
C urves m u st b e de rate d
lin ea rly w ith incre ase
in te m pe ratu re
C o lle c to r - E m itte r V o lta g e , V
1
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
o
C
1
t1
D C O p e ra tio n
t2
1 0
C
10
10 0
1m s
C E
1 00
[V ]
μ
s
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10 00
5 0
μ
s