FGAF40N60UFTU Fairchild Semiconductor, FGAF40N60UFTU Datasheet

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FGAF40N60UFTU

Manufacturer Part Number
FGAF40N60UFTU
Description
IGBT ULTRA FAST 600V TO-3PF
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGAF40N60UFTU

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant

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©2004 Fairchild Semiconductor Corporation
FGAF40N60UF
Ultrafast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
P
T
T
T
R
R
C
CM (1)
stg
J
L
CES
GES
D
Symbol
JC
JA
Symbol
(IGBT)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C E
TO-3PF
Description
Parameter
T
C
= 25 C unless otherwise noted
@ T
@ T
@ T
@ T
C
C
C
C
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
= 25 C
= 100 C
= 25 C
= 100 C
G
G
Typ.
FGAF40N60UF
--
--
-55 to +150
-55 to +150
600
160
100
300
40
20
40
20
CE(sat)
C
C
E
E
Max.
1.2
= 2.3 V @ I
40
IGBT
C
FGAF40N60UF Rev. A
Units
= 20A
Units
C/W
C/W
W
W
V
V
A
A
A
C
C
C

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FGAF40N60UFTU Summary of contents

Page 1

... Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol R (IGBT) Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2004 Fairchild Semiconductor Corporation Features • High speed switching • Low saturation voltage : V • High input impedance TO-3PF unless otherwise noted C Description ...

Page 2

... Fall Time f E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc L Internal Emitter Inductance e ©2004 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 250uA 600 0V 1mA -- ...

Page 3

... Vge=15V Case Temperature, T Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 40A 20A 10A Gate - Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2004 Fairchild Semiconductor Corporation 80 Common Emitter 20V Tc= 25 ℃ Tc= 125 ℃ 15V 60 50 12V 10V 0 (V) CE Fig 2. Typical Saturation Voltage ...

Page 4

... ℃ 125 ℃ 100 Gate Resistance, R Fig 9. Turn-Off Characteristics vs. Gate Resistance 200 100 Ton Collector Current, Ic (A) Fig 11. Turn-On Characteristics vs. Collector Current ©2004 Fairchild Semiconductor Corporation 300 Common Emitter Common Emitter 1MHz Vcc=300V ℃ T Ic=20A ℃ 125 ℃ 100 (V) CE Fig 8 ...

Page 5

... Single Nonrepetitive o Pulse Curves must be derated linearly with increase in temperature 0 Collector - Emitter Voltage, V Fig 15. SOA Characteristics sin gle p ulse ©2004 Fairchild Semiconductor Corporation 15 Common Emitter R (Tc=25 ℃ ± 15V = 300V ℃ = 125 ℃ Fig 14. Gate Charge Characteristics 500 100 50 s 100 s ...

Page 6

... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2004 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 – ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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