HGTG10N120BND Fairchild Semiconductor, HGTG10N120BND Datasheet - Page 6

• Manufacturer Part Number: HGTG10N120BND
• Description: IGBT N-CH NPT 1200V 35A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG10N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 17 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
4
3
2
1
0
100
0
10
1
FREQUENCY = 1MHz
10
10
C
1
10
RES
-1
-2
0
10
150
V
VOLTAGE
VOLTAGE DROP
-5
CE
0.05
0.02
0.01
o
0.5
0.2
0.1
C
5
, COLLECTOR TO EMITTER VOLTAGE (V)
2
C
IES
-55
SINGLE PULSE
V
o
F
C
, FORWARD VOLTAGE (V)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
25
3
C
o
OES
C
10
-4
15
4
Unless Otherwise Specified (Continued)
20
5
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
25
6
DUTY FACTOR, D = t
PEAK T
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
15
12
J
9
6
3
0
70
60
50
40
30
20
10
= (P
0
1
10
D
DUTY CYCLE <0.5%, T
PULSE DURATION = 250µs
T
-2
X Z
C
= 25
θJC
V
1
t rr
CE
o
/ t
t a
t b
X R
C, dI
, COLLECTOR TO EMITTER VOLTAGE (V)
2
2
θJC
1
EC
I
F
) + T
, FORWARD CURRENT (A)
/ dt = 200A/µs
C
C
P
= 110
D
10
-1
2
o
C
5
V
GE
= 15V
t
1
t
2
HGTG10N120BND Rev. B
3
10
V
GE
= 10V
10
0
20
4