FGH60N60UFDTU Fairchild Semiconductor, FGH60N60UFDTU Datasheet - Page 7
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FGH60N60UFDTU
Manufacturer Part Number
FGH60N60UFDTU
Description
IGBT 120A 600V FIELD STOP TO-247
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH60N60UFDTU.pdf
(9 pages)
Specifications of FGH60N60UFDTU
Igbt Type
Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 60A
Current - Collector (ic) (max)
120A
Power - Max
298W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Part Number
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Quantity
Price
FGH60N60UFD Rev. A1
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 21. Stored Charge
Figure 23. Transient Thermal Impedance of IGBT
100
80
60
40
200
100
10
5
1
0
T
J
Forward Current, I
20
= 125
1
Forward Voltage, V
di/dt = 100A/
200A/
1E-3
0.01
o
0.1
C
1
1E-5
µ
s
T
single pulse
0.02
0.01
J
0.05
0.5
0.2
0.1
= 75
2
µ
s
o
40
C
F
T
[A]
J
= 25
F
[V]
T
T
1E-4
C
C
o
C
3
= 25
= 125
o
C
o
C
Rectangular Pulse Duration [sec]
60
4
1E-3
7
Figure 22. Reverse Recovery Time
Figure 20. Reverse Current
0.01
0.01
500
100
0.1
10
60
50
40
30
1
0
5
Peak T
Duty Factor, D = t1/t2
P
DM
j
= Pdm x Zthjc + T
Reverse Voltage, V
0.1
Forward Current, I
20
t
200
1
di/dt = 100A/
t
2
200A/
T
T
C
T
C
C
= 125
= 25
µ
= 75
s
C
µ
o
s
o
o
C
C
1
C
40
F
R
400
[A]
[V]
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600
60