FGH60N60SFDTU Fairchild Semiconductor, FGH60N60SFDTU Datasheet - Page 5

• Manufacturer Part Number: FGH60N60SFDTU
• Description: IGBT 120A 600V FIELD STOP TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH60N60SFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 378W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 120 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH60N60SFD Rev. A1
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
6000
5000
4000
3000
2000
1000
0.01
500
100
20
16
12
0.1
10
8
4
0
1
0
1
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
4
Gate-Emitter Voltage, V
60A
I
C
C
C
C
= 30A
res
oes
10
ies
8
120A
12
Common Emitter
V
T
C
Common Emitter
T
GE
100
10
C
= 25
= 25
GE
= 0V, f = 1MHz
CE
o
GE
[V]
CE
[V]
C
o
16
100
C
1ms
10 ms
DC
[V]
µ
10
s
µ
s
1000
20
30
5
Figure 12. Turn off Switching SOA Characteristics
Figure 8. Saturation Voltage vs. V
Figure 10. Gate charge Characteristics
300
100
10
15
12
20
16
12
1
9
6
3
0
8
4
0
0
1
0
Common Emitter
T
Safe Operating Area
V
C
GE
= 25
= 15V, T
V
Collector-Emitter Voltage, V
o
CC
C
4
Gate-Emitter Voltage, V
I
= 100V
50
C
= 30A
60A
C
Gate Charge, Q
= 125
10
8
o
C
100
12
g
100
[nC]
Common Emitter
T
C
120A
GE
= 125
150
200V
CE
[V]
16
[V]
GE
o
C
300V
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1000
200
20