HGTG30N60A4D Fairchild Semiconductor, HGTG30N60A4D Datasheet - Page 7

• Manufacturer Part Number: HGTG30N60A4D
• Description: IGBT N-CH SMPS 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60A4D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Pd: 463W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: HGTG30N60A4D_NL; HGTG30N60A4D_NL

Typical Performance Curves
Test Circuit and Waveforms
©2004 Fairchild Semiconductor Corporation
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
10
10
10
-1
-2
0
R
10
G
-5
0.20
0.50
0.10
0.02
0.01
0.05
= 3
SINGLE PULSE
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
-4
L = 200 H
DUT
+
-
Unless Otherwise Specified (Continued)
HGTP30N60A4D
DIODE TA49373
V
DD
10
t
1
-3
= 390V
, RECTANGULAR PULSE DURATION (s)
10
-2
V
V
I
CE
GE
CE
FIGURE 25. SWITCHING TEST WAVEFORMS
DUTY FACTOR, D = t
t
PEAK T
10
d(OFF)I
90%
-1
10%
J
P
= (P
t
D
fI
D
X Z
E
t
1
OFF
t
90%
2
JC
1
/ t
10
X R
2
0
E
JC
ON2
) + T
10%
t
d(ON)I
C
HGTG30N60A4D Rev. B1
t
rI
10
1