APT13GP120BG Microsemi Power Products Group, APT13GP120BG Datasheet

IGBT 1200V 41A 250W TO247

APT13GP120BG

Manufacturer Part Number
APT13GP120BG
Description
IGBT 1200V 41A 250W TO247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT13GP120BG

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 13A
Current - Collector (ic) (max)
41A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
RBSOA
T
V
V
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• 100 kHz operation @ 600V, 10A
• 50 kHz operation @ 600V, 16A
• RBSOA Rated
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
= 25°C
= 110°C
= 15V, I
= 15V, I
= ±20V)
, I
J
C
= 150°C
GE
= 1mA, T
GE
GE
®
C
C
= 0V, I
IGBT
= 13A, T
= 13A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 500µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
APT13GP120B
APT13GP120BG*
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
1200
MIN
1200V
APT13GP120B_S(G)
3
50A @ 960V
-55 to 150
1200
APT13GP120S
APT13GP120SG*
±30
250
300
TYP
G
41
20
50
4.5
3.3
3.0
APT13GP120B_S(G)
C
E
B
G
3000
MAX
±100
500
3.9
6
G
D
C
C
E
3
Amps
Watts
UNIT
Units
Volts
PAK
Volts
°C
µA
nA
E
S

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APT13GP120BG Summary of contents

Page 1

... CES Collector Cut-off Current (V I Gate-Emitter Leakage Current (V GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT13GP120B APT13GP120BG* ® IGBT ® • 100 kHz operation @ 600V, 10A • 50 kHz operation @ 600V, 16A • RBSOA Rated All Ratings 25° ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Reverse Bias Safe Operating ...

Page 3

T = -55° 125° 25° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics 250µs ...

Page 4

V = 15V 600V 25°C 125° 5Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time vs Collector Current = = ...

Page 5

TYPICAL PERFORMANCE CURVES 3,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0. ...

Page 6

APT15DQ120 90% Gate Voltage t d(off) Collector Voltage 90 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions t Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J APT13GP120B_S(G) Gate ...

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