APT20GF120SRDQ1G Microsemi Power Products Group, APT20GF120SRDQ1G Datasheet - Page 8

• Manufacturer Part Number: APT20GF120SRDQ1G
• Description: IGBT 1200V 36A 200W D3PAK
• Manufacturer: Microsemi Power Products Group

Specifications of APT20GF120SRDQ1G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 36A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D³Pak (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 29. Dynamic Parameters vs. Junction Temperature
2500
2000
1500
1000
Figure 31. Junction Capacitance vs. Reverse Voltage
500
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
Figure 25. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
t
V
rr
F
F
T
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
J
200
, JUNCTION TEMPERATURE (°C)
25
V
1
I
R
RRM
30A
T
, REVERSE VOLTAGE (V)
J
400
= -55°C
50
T
T
J
T
J
2
J
= 25°C
10
= 175°C
= 125°C
600
75
Q
3
rr
800
100
7.5A
t
rr
1000
Q
T
4
V
125
J
R
rr
100 200
= 125°C
= 800V
15A
1200
150
5
Figure 26. Reverse Recovery Time vs. Current Rate of Change
Figure 30. Maximum Average Forward Current vs. CaseTemperature
Figure 28. Reverse Recovery Current vs. Current Rate of Change
400
350
300
250
200
150
100
50
25
20
15
10
35
30
25
20
15
10
0
5
0
5
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
= 800V
200
200
50
Case Temperature (°C)
400
400
75
7.5A
600
600
100
30A
30A
15A
15A
800
800
125
Duty cycle = 0.5
7.5A
T
1000
1000
J
T
150
V
J
R
= 175°C
= 125°C
= 800V
1200
1200
175