APT50GN120B2G Microsemi Power Products Group, APT50GN120B2G Datasheet - Page 5

• Manufacturer Part Number: APT50GN120B2G
• Description: IGBT 1200V 134A 543W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT50GN120B2G

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 134A
• Power - Max: 543W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
6,000
1,000
0.25
0.20
0.15
0.10
0.05
500
100
Junction
temp. (°C)
V
CE
0
10
0
(watts)
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Power
-5
10
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
0.115
0.115
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
0es
res
0.0088F
0.188F
SINGLE PULSE
50
10
-3
120
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
10 20
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 2.2Ω
160
140
120
100
= 800V
Figure 18,Minimim Switching Safe Operating Area
-2
80
60
40
20
0
°
°
I
C
0
C
C
30
V
, COLLECTOR CURRENT (A)
CE
200
, COLLECTOR TO EMITTER VOLTAGE
40 50
400
Note:
60 70
Peak T J = P DM x Z θJC + T C
600
10
Duty Factor D =
-1
800
t 1
80 90 100
t 2
1000 1200 1400
APT50GN120B2(G)
t 1
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f