APT50GT120LRDQ2G Microsemi Power Products Group, APT50GT120LRDQ2G Datasheet - Page 2

• Manufacturer Part Number: APT50GT120LRDQ2G
• Description: IGBT 1200V 106A 694W TO264
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GT120LRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 106A
• Power - Max: 694W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GT120LRDQ2GMI; APT50GT120LRDQ2GMI

THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
8 Continuous current limited by package lead temperature.
Symbol
Symbol
SSOA
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
V
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
G
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
JC
JC
g
is external gate resistance, not including R
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
6
4
4
4
G(int)
55
5
nor gate driver impedance.
T
15V, L = 100µH, V
Inductive Switching (125°C)
J
Inductive Switching (25°C)
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
V
R
V
R
T
V
V
V
f = 1 MHz
J
CC
CC
CE
I
I
G
I
G
J
GE
GE
GE
C
C
C
= +125°C
= +25°C
= 1.0Ω
= 1.0Ω
= 50A
= 50A
= 50A
= 600V
G
= 800V
= 800V
= 15V
= 15V
= 15V
= 1.0Ω
CE
CE
= 25V
7
7
= 1200V
7
, V
GE
=
MIN
150
MIN
2500
3585
4835
1910
3580
6970
2750
TYP
250
155
240
110
215
255
TYP
7.5
5.9
20
23
50
26
23
50
50
MAX
MAX
.18
.61
UNIT
UNIT
°C/W
nC
pF
µ
µ
gm
ns
ns
V
A
J
J