APT50GF120LRG Microsemi Power Products Group, APT50GF120LRG Datasheet - Page 5

• Manufacturer Part Number: APT50GF120LRG
• Description: IGBT 1200V 156A 781W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT50GF120LRG

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 75A
• Current - Collector (ic) (max): 156A
• Power - Max: 781W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GF120LRGMI; APT50GF120LRGMI

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Dissipated Power
Figure 17, Capacitance vs Collector-To-Emitter Voltage
(Watts)
1,000
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
500
100
V
50
10
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
10
T
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
J
(°C)
0.0227
20
0.0601
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
are the external thermal
10
-4
30
0.420
0.0994
T
C
(°C)
40
C
RECTANGULAR PULSE DURATION (SECONDS)
C
C
ies
oes
res
50
SINGLE PULSE
10
-3
Figure 20, Operating Frequency vs Collector Current
80
10
5
1
10
T
D = 50 %
V
R
10
J
CE
G
= 125
= 1.0Ω
250
200
150
100
-2
= 800V
Figure 18,Minimim Switching Safe Operating Area
50
20
0
°
I
C
C
0
V
, COLLECTOR CURRENT (A)
CE
30
200
, COLLECTOR TO EMITTER VOLTAGE
T
C
= 100
40
400
°
C
Note:
T
C
50
Peak T J = P DM x Z θJC + T C
600
= 75
10
Duty Factor D =
-1
°
C
60
800
t 1
APT50GF120B2_LR(G)
t 2
70
1000 1200 1400
t 1
80
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f