APT45GP120B2DQ2G Microsemi Power Products Group, APT45GP120B2DQ2G Datasheet - Page 6

• Manufacturer Part Number: APT45GP120B2DQ2G
• Description: IGBT 1200V 113A 625W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120B2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 113A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120B2DQ2GMI; APT45GP120B2DQ2GMI

V
CC
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
Switching
Energy
90%
t
d(off)
90%
I
C
D.U.T.
t
f
V
CE
10%
APT40DQ120
Collector Voltage
A
Collector Current
Gate Voltage
0
T
J
= 125 °C
Figure 22, Turn-on Switching Waveforms and Definitions
Collector Voltage
Collector Current
Gate Voltage
Figure 24, E ON1 Test Circuit
V
TEST
100uH
A
10%
5%
DRIVER*
A
10%
Switching Energy
t
r
t
d(on)
90%
*DRIVER SAME TYPE AS D.U.T.
5 %
V
CLAMP
I
C
V
CE
D.U.T.
T
J
= 125 °C
B