APT75GP120B2G Microsemi Power Products Group, APT75GP120B2G Datasheet - Page 5

• Manufacturer Part Number: APT75GP120B2G
• Description: IGBT 1200V 100A 1042W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT75GP120B2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Power - Max: 1042W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT75GP120B2GMI; APT75GP120B2GMI

TYPICAL PERFORMANCE CURVES
Case temperature (°C)
20,000
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1,000
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.14
0.12
0.10
0.08
0.06
0.04
0.02
500
100
Junction
temp (°C)
V
50
10
CE
0
10
(watts)
0
Power
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
10
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.05
0.9
0.7
0.5
0.3
0.1
RC MODEL
20
0.00792
0.0475
0.0656
10
30
-4
SINGLE PULSE
40
RECTANGULAR PULSE DURATION (SECONDS)
C ies
C oes
C res
0.00354F
0.0307F
0.361F
50
10
-3
10
350
300
250
200
150
100
140
100
Figure 18, Minimim Switching Safe Operating Area
-2
50
50
10
.3
0
10
0 100 200 300 400 500 600 700 800 900 1000
Figure 20, Operating Frequency vs Collector
V
T
T
D = 50 %
V
R
CE
J
C
CE
G
= 125
= 75
= 5
, COLLECTOR TO EMITTER VOLTAGE
= 800V
30
I
C
°
°
, COLLECTOR CURRENT (A)
C
C
F
f
f
P
max1
max 2
max
diss
50
Note:
T
min(f
t
Peak T J = P DM x Z JC + T C
P
E
J
R
70
d (on)
10
diss
Current
on 2
Duty Factor D =
JC
-1
T
max1
C
P
90
E
t
cond
r
0.05
t 1
, f
off
max 2
t
d(off )
t 2
110
)
t 1
/ t
t
130
2
f
APT75GP120B2
1.0
150