STGFL6NC60DI STMicroelectronics, STGFL6NC60DI Datasheet - Page 7

• Manufacturer Part Number: STGFL6NC60DI
• Description: IGBT N-CH 600V 6A TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGFL6NC60DI

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 3A
• Current - Collector (ic) (max): 7A
• Power - Max: 22W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

STGBL6NC60DI, STGDL6NC60DI, STGPL6NC60DI, STGFL6NC60DI
Figure 8.
Figure 10. Normalized breakdown voltage vs
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
(µJ)
100
80
60
40
E
0
Normalized gate threshold voltage
vs temperature
temperature
V
CC
I
40
C
= 3 A, T
= 390 V, V
E
on
80
j
= 125 °C
GE
120
= 15 V
160
E
off
R
G
Doc ID 15536 Rev 2
(Ω)
AM03826v1
Figure 9.
Figure 11. Switching losses vs temperature
(µJ)
(µJ)
40
30
20
10
50
50
40
30
20
10
E
E
0
0.5
0
Collector-emitter on voltage vs
collector current
current
25
1
V
1.5
50
CC
I
E
C
V
on
= 390 V, V
= 3 A, R
CC
Electrical characteristics
R
g
= 390 V, V
75
= 10 Ω, T
2
G
E
100
GE
= 10 Ω
2.5
on
E
j
GE
= 15 V
off
= 125 °C
= 15 V
E
3
off
T
J
(°C)
I
AM03825v1
AM03827v1
c
(A)
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