STGF10NB60SD STMicroelectronics, STGF10NB60SD Datasheet - Page 6

• Manufacturer Part Number: STGF10NB60SD
• Description: MOSFET N-CHAN 10A 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NB60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Pd: 25W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Output characteristics
Transconductance
Collector-emitter on voltage vs
collector current
Doc ID 11860 Rev 2
Figure 3.
Figure 5.
Figure 7.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Normalized gate threshold vs
temperature
STGF10NB60SD, STGP10NB60SD