STGD5NB120SZT4 STMicroelectronics, STGD5NB120SZT4 Datasheet - Page 3

• Manufacturer Part Number: STGD5NB120SZT4
• Description: IGBT N-CHAN 10A 1200V DPAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGD5NB120SZT4

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 75W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 75W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 10A
• Gate To Emitter Voltage (max): ±20V
• Package Type: DPAK
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 10 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4352-2

STGD5NB120SZ
1
Electrical ratings
Table 2.
1. Calculated according to the iterative formula:
2. Pulse width limited by max. temperature allowed
3. V
4. V
Table 3.
Symbol
E
Symbol
R
R
I
V
I
V
P
CL
I
I
CP
V
AS
C
C
thj-case
ECR
CLAMP
CE
thj-amb
CES
TOT
T
GE
(1)
(1)
(2)
j
(3)
(4)
= 50 V , I
= 80% (V
Collector-emitter voltage (V
Collector current (continuous) at T
Collector current (continuous) at T
Pulsed collector current
Turn-off latching current
Gate-emitter voltage
Emitter-collector voltage
Single pulse avalanche energy at T
Single pulse avalanche energy at T
Total dissipation at T
Operating junction temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case IGBT max
Thermal resistance junction-ambient max
AV
= 3.3 A
CES
), V
I
GE
C
(
T
= 15 V, R
C
)
=
C
= 25 °C
Parameter
-------------------------------------------------------------------------------------------------------
R
Parameter
G
thj c
= 10 Ω, T
–
GE
×
= 0)
V
CE sat
C
C
J
C
C
= 150 °C
(
= 25 °C
= 100 °C
T
= 25 °C
= 100 °C
j max
(
) max
(
)
–
)
(
T
T
C
j max
(
)
,
I
C
(
T
C
)
)
– 55 to 150
Value
Value
1200
1.67
100
±20
10
10
10
20
10
75
Electrical ratings
5
7
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
W
3/15
V
A
A
A
A
V
V