IRG4RC10KDPBF International Rectifier, IRG4RC10KDPBF Datasheet

IGBT UFAST 600V 9A COPACK DPAK

IRG4RC10KDPBF

Manufacturer Part Number
IRG4RC10KDPBF
Description
IGBT UFAST 600V 9A COPACK DPAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4RC10KDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.62V @ 15V, 5A
Current - Collector (ic) (max)
9A
Power - Max
38W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Package
D-Pak
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
600
Ic @ 25c (a)
9
Ic @ 100c (a)
5
Vce(on)@25c Typ (v)
2.39
Vce(on)@25c Max (v)
2.62
Ets Typ (mj)
0.39
Ets Max (mj)
0.48
Qrr Typ Nc 25c
40
Qrr Max Nc 25c
60
Vf Typ
1.50
Pd @25c (w)
38
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-252AA package
• Lead-Free
Benefits
Thermal Resistance
www.irf.com
• Latest generation 4 IGBT's offer highest power density
• HEXFRED
• For hints see design tip 97003
V
I
I
I
I
I
I
t
V
P
P
T
T
R
R
R
Wt
Circuit Rated to 10µs @ 125°C, V
parameter distribution and higher efficiency than
For recommended footprint and soldering techniques refer to application note #AN-994
high operating frequencies >5.0 kHz , and Short
previous generation
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Minimized recovery characteristics reduce noise, EMI and
C
C
CM
LM
F
FM
sc
When mounted on 1" square PCB (FR-4 or G-10 Material).
STG
motor controls possible
switching losses
CES
GE
D
D
J
θJC
θJC
θJA
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
diodes optimized for performance with IGBTs.
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Parameter
Parameter
GE
TM
= 15V
ultrafast,

IRG4RC10KDPbF
G
n-channel
300 (0.063 in. (1.6mm) from case)
0.3 (0.01)
Typ.
–––
–––
–––
C
E
-55 to +150
Max.
± 20
600
9.0
5.0
4.0
18
18
16
10
38
15
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
Max.
V
GE
–––
3.3
7.0
50
CES
= 15V, I
= 600V
= 2.39V
C
= 5.0A
Units
Units
g (oz)
µs
°C
V
A
V
1

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IRG4RC10KDPBF Summary of contents

Page 1

... Junction-to-Case - Diode θJC R Junction-to-Ambient (PCB mount)* θJA Wt Weight When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com IRG4RC10KDPbF = 15V ultrafast, n-channel  300 (0.063 in. (1.6mm) from case) 0.3 (0.01) Short Circuit Rated ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward ...

Page 3

Square wave: 60% of rated 0.8 voltage I 0.4 Ideal diodes 0.0 0.1 Fig Typical Load Current vs. Frequency 100 150 20µs PULSE WIDTH ...

Page 4

T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL ...

Page 5

1MHz ies res oes ce gc 300 C ies 200 100 C oes C res 0 ...

Page 6

R = Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector Current (A) C Fig Typical Switching Losses ...

Page 7

V = 200V 125° 25° 100 di /dt - (A/µs) f 200 V = 200V 125° 25°C J 160 I ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. ...

Page 9

Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...

Page 10

A - 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) EXAMPLE: THIS IS AN IRFR120 WITH AS S EMBLY LOT ...

Page 11

Notes:  Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) ‚ V =80%( =20V, L=10µ CES GE ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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