IXGP7N60CD1 IXYS, IXGP7N60CD1 Datasheet
IXGP7N60CD1
Manufacturer Part Number
IXGP7N60CD1
Description
IGBT 600V FRD TO-220
Manufacturer
IXYS
Series
HiPerFAST™, Lightspeed 2™r
Datasheet
1.IXGP7N60CD1.pdf
(2 pages)
Specifications of IXGP7N60CD1
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 7A
Current - Collector (ic) (max)
14A
Power - Max
75W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220AB
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
14
Ic90, Tc=90°c, Igbt, (a)
7
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
45
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.22
Rthjc, Max, Igbt, (°c/w)
2.3
If, Tj=110°c, Diode, (a)
7
Rthjc, Max, Diode, (ºc/w)
1.6
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
HiPerFAST
with Diode
Lightspeed
Preliminary Data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
© 2003 IXYS All rights reserved
CM
C25
C90
CES
GES
J
JM
stg
CGR
GEM
C
GE(th)
CE(sat)
CES
GES
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 300 H
T
Mounting torque, (TO-220)
TO-220
TO-263
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
GE
C
GE
J
J
CE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
TM
GE
GE
TM
CES
VJ
= 15 V
= ±20 V
IGBT
= 125°C, R
CE
GE
= V
= 0 V
Series
GE
T
T
GE
J
J
= 1 M
= 25°C
= 125°C
G
= 22
(T
J
= 25°C, unless otherwise specified)
M3
M3.5
IXGA 7N60CD1
IXGP 7N60CD1
600
2.5
min.
Characteristic Values
@ 0.8 V
Maximum Ratings
I
-55 ... +150
-55 ... +150
CM
typ.
2.0
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
= 14
600
600
±20
±30
300
75
14
30
CES
7
max.
±100
150
100
750
5.5
2.5
4
2
nA
V
V
V
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
A
A
g
g
V
I
V
t
Features
Applications
Advantages
G = Gate,
E = Emitter,
C25
fi
International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
High frequency IGBT
High current handling capability
HiPerFAST
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
CES
CE(sat)typ
TO-263 AA (IXGA)
TO-220AB (IXGP)
TM
G
G C
HDMOS
C = Collector,
TAB = Collector
= 600
=
= 2.0
=
E
E
DS98720A(01/03)
TM
14 A
45 ns
process
C (TAB)
V
V
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IXGP7N60CD1 Summary of contents
Page 1
... V GE(th 0.8 • V CES CE CES ±20 V GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGA 7N60CD1 IXGP 7N60CD1 Maximum Ratings 600 = 1 M 600 GE ±20 ± 0.8 V CES 75 -55 ... +150 150 -55 ... +150 300 M3 0.45/4 Nm/lb.in. M3.5 0.55/5 Nm/lb.in. Characteristic Values (T = 25° ...
Page 2
... 100 V; I =25A; - < 0. -di/ Diode thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 500 0 CES 130 off 45 110 ...