STGF7NC60HD STMicroelectronics, STGF7NC60HD Datasheet - Page 4

• Manufacturer Part Number: STGF7NC60HD
• Description: IGBT N-CHAN 10A 600V TO220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF7NC60HD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 10A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 25W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 10 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4354-5

STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
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Table 10: Collector-Emitter Diode
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
t
t
S
S
rr
rr
a
a
rr
rr
f
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Parameter
If = 3.5 A
If = 3.5 A, Tj = 125 °C
If = 7 A, V
T
If = 7 A, V
T
j
j
= 25 °C, di/dt = 100 A/µs
= 125 °C, di/dt = 100 A/µs
Test Condiction
R
R
= 40 V,
= 40 V,
Min.
0.68
0.79
Typ.
1.3
1.1
2.1
3.2
37
22
40
61
34
98
Max.
1.9
Unit
nC
nC
ns
ns
ns
ns
V
V
A
A