IXGP12N100A IXYS, IXGP12N100A Datasheet
IXGP12N100A
Manufacturer Part Number
IXGP12N100A
Description
IGBT 24A 1000V TO-220AB
Manufacturer
IXYS
Datasheet
1.IXGP12N100.pdf
(2 pages)
Specifications of IXGP12N100A
Voltage - Collector Emitter Breakdown (max)
1000V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 12A
Current - Collector (ic) (max)
24A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220AB
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
24
Ic90, Tc=90°c, Igbt, (a)
12
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Tj=25°c, Igbt, (ns)
500
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.2
Rthjc, Max, Igbt, (°c/w)
1.25
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGP12N100A
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGP12N100AU1
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
IGBT
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
(T
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
J
CES
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 300 mH
T
Mounting torque with screw M3
Mounting torque with screw M3.5
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 3 mA, V
= 250 mA, V
= 0 V
= 0 V, V
= I
= 0.8, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
CE90
, V
GE
CES
GE
VJ
GE
= ±20 V
= 15
GE
= 125°C, R
= 0 V
= V
GE
GE
= 1 MW
G
= 150 W
T
T
12N100
12N100A
J
J
= 25°C
= 125°C
IXGA/IXGP12N100
IXGA/IXGP12N100A
Min.
1000
Maximum Ratings
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Typ.
I
CM
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
1000
1000
= 24
±20
±30
100
150
300
CES
24
12
48
4
±100
Max.
250
5.0
3.5
4.0
1
mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
TO-263 (IXGA)
Features
• International standard packages
• Second generation HDMOS
• Low V
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with one screw
• Reduces assembly time and cost
• High power density
TO-220AB (IXGP)
1000 V
1000 V
JEDEC TO-220AB and TO-263AA
process
- for minimum on-state conduction
- drive simplicity
power supplies
V
losses
CES
CE(sat)
G C
E
G
E
24 A
24 A
I
C25
95591A (3/97)
TM
C (TAB)
V
3.5 V
4.0 V
CE(sat)
1 - 2
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IXGP12N100A Summary of contents
Page 1
... CES ± GES CE(sat) C CE90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGA/IXGP12N100 IXGA/IXGP12N100A Maximum Ratings 1000 = 1 MW 1000 GE ±20 ± 150 0.8 V CES 100 -55 ... +150 150 -55 ... +150 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. ...
Page 2
... CES G 12N100A 4 12N100 6 0.25 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGP12N100 IXGP12N100A TO-220 AB (IXGP) Outline Max 700 ns ns Dim. Millimeter Min. Max. 4 ...