IXGP16N60B2D1 IXYS, IXGP16N60B2D1 Datasheet - Page 7

IGBT 600V 40A FRD TO-220

IXGP16N60B2D1

Manufacturer Part Number
IXGP16N60B2D1
Description
IGBT 600V 40A FRD TO-220
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGP16N60B2D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 12A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220AB
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
16
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.38
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
11
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGP16N60B2D1
Manufacturer:
IXYS
Quantity:
18 000
© 2010 IXYS CORPORATION, All Rights Reserved
60
55
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
25
20
I
Fig. 20. Inductive Turn-on Switching Times vs.
T
V
Fig. 18. Inductive Turn-on Switching Times vs.
t
t
R
V
C
r i
J
CE
r i
CE
G
35
= 24A
= 125ºC, V
= 22
30
= 400V
= 400V
45
, V
40
GE
GE
t
I
t
d(on)
= 15V
= 15V
d(on)
55
C
Junction Temperature
= 12A
T
J
- - - -
- - - -
Gate Resistance
50
- Degrees Centigrade
R
65
G
- Ohms
60
75
85
70
95
80
I
I
C
C
= 12A
= 24A
105
90
115
100
125
55
50
45
40
35
30
25
20
15
10
24
23
22
21
20
19
18
17
16
15
14
55
50
45
40
35
30
25
20
15
12
IXGA16N60B2D1
Fig. 19. Inductive Turn-on Switching Times vs.
t
R
V
13
r i
G
CE
= 22
= 400V
14
, V
GE
15
t
d(on)
= 15V
16
Collector Current
- - - -
17
I
C
T
J
18
- Amperes
= 25ºC, 125ºC
19
IXGH16N60B2D1
IXGP16N60B2D1
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22
IXYS REF: IXG_16N60B3D1(3D)8-02-10
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