IRG4IBC20WPBF International Rectifier, IRG4IBC20WPBF Datasheet
IRG4IBC20WPBF
Specifications of IRG4IBC20WPBF
Related parts for IRG4IBC20WPBF
IRG4IBC20WPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications V • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff ...
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IRG4IBC20W Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...
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S qu are wave lta 0.1 1 Fig Typical ...
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IRG4IBC20W 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL ...
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1MHz ies res 800 oes 600 C ies 400 C oes ...
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IRG4IBC20W 0 Ohm 150 C ° 480V 15V GE 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig ...
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L 50V 1 000V river sam e type as D.U 80% of Vce(m ax ote: Due to the 50V pow er supply, pulse w idth and inductor w ill increase to obtain ...
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IRG4IBC20W (. (. 3.7 0 (.145 ) 3.2 0 (.126 ) 1 6 5.8 0 (.62 2) 1.1 5 (.0 45 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...