IRG4BC30U-SPBF International Rectifier, IRG4BC30U-SPBF Datasheet

IGBT UFAST 600V 23A D2PAK

IRG4BC30U-SPBF

Manufacturer Part Number
IRG4BC30U-SPBF
Description
IGBT UFAST 600V 23A D2PAK
Manufacturer
International Rectifier

Specifications of IRG4BC30U-SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 12A
Current - Collector (ic) (max)
23A
Power - Max
100W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Type
IGBT
Dc Collector Current
23A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Other names
*IRG4BC30U-SPBF
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
*
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
Features
• UltraFast: Optimized for high operating
• Generation 4 IGBT design provides tighter
• Industry standard D
R
R
V
I
I
I
I
V
E
P
P
T
T
www.irf.com
C
C
CM
LM
When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
kHz in resonant mode
parameter distribution and higher efficiency than
Generation 3
Lead-Free
industry-standard Generation 3 IR IGBT's
J
STG
frequencies 8-40 kHz in hard switching, >200
CES
GE
ARV
D
D
θJC
θJA
techniques refer to application note #AN-994.
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)*
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
2
Pak package
Parameter
Parameter

ƒ
IRG4BC30U-SPbF
G
n-channel
Typ.
–––
–––
E
C
-55 to + 150
D
2
Max.
± 20
Pak
UltraFast Speed IGBT
600
100
23
12
92
10
42
92
V
@V
CE(on) typ.
Max.
V
GE
1.2
40
CES
= 15V, I
= 600V
= 1.95V
C
Units
= 12A
Units
°C/W
mJ
V
A
V
1

Related parts for IRG4BC30U-SPBF

IRG4BC30U-SPBF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case θJC R Junction-to-Ambient, ( PCB Mounted,steady-state)* θJA * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRG4BC30U-SPbF n-channel D  ‚ ƒ - 150 Typ. ––– ––– ...

Page 2

... IRG4BC30U-SPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage „ 18 (BR)ECS ∆ ∆ Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance … Zero Gate Voltage Collector Current ...

Page 3

... T = 25° 20µs PULSE WIDTH 0.1 0 Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com IRG4BC30U-SPbF For both: Duty cycle: 50 125° 55°C sink Gate drive as specified Power Dissipation = 1.75W 1 f, Frequency (kHz) of fundamental; for triangular wave, I=I RMS 100 T = 150° 150° ...

Page 4

... IRG4BC30U-SPbF 100 T , Case Temperature (°C) C Fig Maximum Collector Current vs.Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V V = 15V GE GE 80µs PULSE WIDTH 2.5 2 ...

Page 5

... V , Collector-to-Emitter Voltage (V) CE Fig Typical Capacitance vs. Collector-to-Emitter Voltage 0 480V 15V 25° 12A C 0.4 0.3 0 Gate Resistance ( Ω Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4BC30U-SPbF SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 Fig Typical Switching Losses vs. = 400V = 12A ...

Page 6

... IRG4BC30U-SPbF 1 Ω 150° 480V 15V GE 1.2 0.8 0.4 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 100 0 20V = 125°C SAFE OPERATING AREA 10 100 , Collector-to-Emitter Voltage (V) CE Fig Turn-Off SOA www.irf.com 1000 ...

Page 7

... L 50V 1000V * Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. 50V 1000V Ã 10 90% 10 d(on) www.irf.com IRG4BC30U-SPbF D.U. VCC D.U.T. Driver 90% t d(off t=5µ off off VCC ICM 480µ ...

Page 8

... IRG4BC30U-SPbF 2 Dimensions are shown in millimeters (inches DIU@SI6UDPI6G S@8UD D@S GPBP 6TT@H7G` GPUÃ8P9@ 8 Q6SUÃIVH7@S $"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69 S@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com ...

Page 9

... NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG4BC30U-SPbF 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 3.90 (.153) 11.60 (.457) 11 ...

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