IXGC16N60B2 IXYS, IXGC16N60B2 Datasheet
IXGC16N60B2
Manufacturer Part Number
IXGC16N60B2
Description
IGBT FAST B2 600V 28A ISOPLUS220
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGC16N60B2.pdf
(2 pages)
Specifications of IXGC16N60B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 12A
Current - Collector (ic) (max)
28A
Power - Max
63W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Vces, (v)
-
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
-
Tfi, Typ, Tj=25°c, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (°c/w)
-
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFAST
B2-Class High Speed
IGBT in ISOPLUS220
Electrically Isolated Back Surface
Symbol
V
I
I
V
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
F
V
Weight
CES
GES
© 2004 IXYS All rights reserved
C25
C110
D110
CM
GE(th)
CE(sat)
J
JM
stg
C
CES
CGR
GES
GEM
C
ISOL
Test Conditions
I
V
V
V
I
Note 2
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped inductive load
T
Mounting Force
Isolation Voltage; 50/60Hz; t = 1minute; RMS
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
C
C
CE
GE
CE
J
J
C
C
C
C
C
GE
= 12 A
= 250 μA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 110°C (IXGC16N60B2D1 diode)
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
TM
CES
,
V
GE
IGBT
GE
J
= 15 V
CE
= 125°C, R
= ±20 V
= V
GE
GE
G
TM
= 1 MΩ
= 22 Ω
16N60B2
16N60B2D1
T
J
Case
(T
=125°C
J
= 25°C, unless otherwise specified)
IXGC 16N60B2
IXGC 16N60B2D1
min.
2.5
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
@0.8 V
Maximum Ratings
typ.
I
1.8
CM
2500
= 32
600
600
±20
±30
100
150
300
CES
28
13
10
63
max.
2
±100
5.0
2.3
50
25
D1
N/lb.
μA
μA
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
A
V
g
V
I
V
t
ISOPLUS 220
G = Gate
E = Emitter
Features
Applications
Advantages
frequency applications
C25
fi(typ)
DCB Isolated mounting tab
UL recognized (E153432)
Meets TO-273 package Outline
High current handling capability
MOS Gate turn-on
- drive simplicity
Epoxy meets UL94V-0 flammability
classification
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Easy assembly
High power density
Very fast switching speeds for high
CES
CE(sat)
G
C
E153432
E
TM
= 600 V
=
=
= 2.3 V
Isolated back surface*
C = Collector
(IXGC)
28 A
80 ns
DS99173A(11/04)
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IXGC16N60B2 Summary of contents
Page 1
... Preliminary Data Sheet Symbol Test Conditions 25°C to 150°C CES 25°C to 150°C; R CGR J V Continuous GES V Transient GEM 25°C C25 110°C C110 110°C (IXGC16N60B2D1 diode) D110 25° SSOA 125° (RBSOA) Clamped inductive load 25° stg F Mounting Force C V Isolation Voltage ...
Page 2
... Switching times may increase for V or increased Pulse test, t < 300 ms, duty cycle d < IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° ...