IXGH16N60B2D1 IXYS, IXGH16N60B2D1 Datasheet - Page 7

• Manufacturer Part Number: IXGH16N60B2D1
• Description: IGBT 600V 40A TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH16N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 12A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 16
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.38
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 11
• Rthjc, Max, Diode, (ºc/w): 2.5
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
60
55
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
25
20
I
Fig. 20. Inductive Turn-on Switching Times vs.
T
V
Fig. 18. Inductive Turn-on Switching Times vs.
t
t
R
V
C
r i
J
CE
r i
CE
G
35
= 24A
= 125ºC, V
= 22
30
= 400V
= 400V
Ω
45
, V
40
GE
GE
t
I
t
d(on)
= 15V
= 15V
d(on)
55
C
Junction Temperature
= 12A
T
J
- - - -
- - - -
Gate Resistance
50
- Degrees Centigrade
R
65
G
- Ohms
60
75
85
70
95
80
I
I
C
C
= 12A
= 24A
105
90
115
100
125
55
50
45
40
35
30
25
20
15
10
24
23
22
21
20
19
18
17
16
15
14
55
50
45
40
35
30
25
20
15
12
IXGA16N60B2D1
Fig. 19. Inductive Turn-on Switching Times vs.
t
R
V
13
r i
G
CE
= 22
= 400V
14
Ω
, V
GE
15
t
d(on)
= 15V
16
Collector Current
- - - -
17
I
C
T
J
18
- Amperes
= 25ºC, 125ºC
19
IXGH16N60B2D1
IXGP16N60B2D1
20
21
22
IXYS REF: IXG_16N60B3D1(3D)8-02-10
23
24
23
22
21
20
19
18
17
16
15