IRGB4059DPBF International Rectifier, IRGB4059DPBF Datasheet - Page 6

• Manufacturer Part Number: IRGB4059DPBF
• Description: IGBT ULT FAST DIO 600V TO-220AB
• Manufacturer: International Rectifier

Specifications of IRGB4059DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 4A
• Current - Collector (ic) (max): 8A
• Power - Max: 56W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 56W
• Collector Emitter Voltage V(br)ceo: 600V
• No. Of Pins: 3
• C-e Breakdown Voltage: 2.2V
• Collector Emitter Saturation Voltage Vce(sat): 2.05V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRGB4059DPbF
6
1000
250
200
150
100
100
20
15
10
50
10
5
0
Fig. 19- Typical Diode I
1
0
0
Fig. 21 - Typical Diode E
0
0
Fig. 23- Typ. Capacitance vs. V
10 Ω
22 Ω
47 Ω
100 Ω
V
CC
I
CE
= 400V; V
20
= 4A; T
V
GE
T
J
= 0V; f = 1MHz
= 175°C
di F /dt (A/µs)
40
J
V CE (V)
= 175°C
GE
I F (A)
500
5
= 15V;
RR
60
vs. di
RR
Cres
Coes
Cies
vs. I
F
/dt
80
F
CE
1000
100
10
800
700
600
500
400
300
200
100
V
16
14
12
10
25
20
15
10
0
CC
5
0
8
6
4
2
0
Fig. 22- Typ. V
Fig. 20 - Typical Diode Q
0
8
= 400V; V
0
100Ω
Fig. 24 - Typical Gate Charge vs. V
10
2
47 Ω
Q G , Total Gate Charge (nC)
V
CC
GE
500
=400V, T
I
CE
= 15V; T
di F /dt (A/µs)
GE
4
12
= 4A, L=600µH
22Ω
V GE (V)
vs Short Circuit Time
C
J
10Ω
6
= 175°C
14
=25°C
1000
300V
2.0A
4.0A
RR
8.0A
8
400V
16
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1500
10
GE
18
25
20
15
10
5
0