IXGH30N60B2 IXYS, IXGH30N60B2 Datasheet - Page 4

IGBT 600V 70A TO-247

IXGH30N60B2

Manufacturer Part Number
IXGH30N60B2
Description
IGBT 600V 70A TO-247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGH30N60B2

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 24A
Current - Collector (ic) (max)
70A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH30N60B2
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXGH30N60B2D1
Manufacturer:
IXYS
Quantity:
15 500
Part Number:
IXGH30N60B2D1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
700
600
500
400
300
200
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
45
40
35
30
25
20
15
10
5
0
2
1
0
10
0
0
T
R
V
V
J
25
Fig. 11. Dependence of Turn-Off
t
t
T
V
V
GE
CE
G
d(off)
fi
10
= -40ºC
Fig. 9. Dependence of Turn-Off
15
J
GE
CE
125ºC
Fig. 7. Transconductance
= 5Ω
= 125ºC
= 400V
-
25ºC
= 15V
= 400V
= 15V
50
- - - - -
Sw itching Tim e on R
20
20
I
C
75
= 48A
Energy on I
I
30
25
R
I
C
100 125 150 175 200 225 250
C
- Amperes
G
- Amperes
- Ohms
40
30
I
C
= 24A
50
35
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
T
C
J
= 125ºC
T
J
= 25ºC
60
40
G
I
C
= 12A
70
45
80
50
260
240
220
200
180
160
140
120
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
80
60
2
1
0
0
25
10
0
Fig. 12. Dependence of Turn-Off
Fig. 10. Dependence of Turn-Off
T
V
V
35
R
V
V
Fig. 8. Dependence of Turn-Off
J
15
GE
CE
10
GE
CE
G
= 125ºC
= 5Ω
= 400V
= 15V
= 400V
Energy on Tem perature
= 15V
45
Sw itching Tim e on I
T
T
J
T
20
20
J
J
= 25ºC
55
= 125ºC
- Degrees Centigrade
Energy on R
I
25
30
R
C
65
- Amperes
G
- Ohms
75
30
40
IXGH 30N60B2
IXGT 30N60B2
I
I
85
C
C
I
35
C
50
G
= 48A
= 24A
= 12A
I
I
C
I
C
95
6,534,343
C
= 48A
= 24A
C
= 12A
t
t
R
V
V
40
60
d(off)
fi
GE
CE
G
105 115 125
- - - - - -
= 5Ω
= 400V
= 15V
45
70
6,583,505
50
80

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