IXGP20N120B3 IXYS, IXGP20N120B3 Datasheet - Page 6

no-image

IXGP20N120B3

Manufacturer Part Number
IXGP20N120B3
Description
IGBT 1200V 36ATO-220
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGP20N120B3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 16A
Current - Collector (ic) (max)
36A
Power - Max
180W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
36
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.10
Tfi, Typ, Tj=25°c, Igbt, (ns)
155
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.63
Rthjc, Max, Igbt, (°c/w)
0.69
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
200
180
160
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
0
10
25
Switching Times vs. Junction Temperature
I
C
Switching Times vs. Gate Resistance
= 32A
35
t
T
V
t
R
V
r i
20
J
CE
r i
G
CE
= 125ºC, V
= 15Ω , V
= 600V
= 600V
I
45
C
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
= 16A
30
55
T
J
GE
GE
t
- Degrees Centigrade
t
d(on)
d(on)
40
= 15V
= 15V
R
65
G
- - - -
- - - -
- Ohms
I
C
50
75
= 32A
85
60
I
95
C
= 16A
70
105
80
115
125
90
90
80
70
60
50
40
30
20
10
0
28
26
24
22
20
18
16
14
12
140
120
100
80
60
40
20
0
10
Switching Times vs. Collector Current
12
t
R
V
r i
CE
G
T
= 15Ω , V
J
= 600V
= 125ºC
14
T
Fig. 19. Inductive Turn-on
J
= 25ºC
16
GE
t
d(on)
18
= 15V
- - - -
20
I
C
- Amperes
22
24
IXGA20N120B3
IXGP20N120B3
26
28
IXYS REF: G_20N120B3(4L)03-17-09
30
32
26
24
22
20
18
16
14
12

Related parts for IXGP20N120B3