IRGB4060DPBF International Rectifier, IRGB4060DPBF Datasheet - Page 4

• Manufacturer Part Number: IRGB4060DPBF
• Description: IGBT ULT FAST DIO 600V TO-220AB
• Manufacturer: International Rectifier

Specifications of IRGB4060DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 99W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 16A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 99W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRGB4060DPbF
4
20
18
16
14
12
10
30
25
20
15
10
20
18
16
14
12
10
8
6
4
2
0
5
0
8
6
4
2
0
Fig. 7 - Typ. IGBT Output Characteristics
5
0
5
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 9 - Typical V
Fig. 11 - Typical V
T
2
J
= 175°C; tp = 80µs
10
10
T
T
J
J
= -40°C
V GE (V)
V CE (V)
V GE (V)
= 175°C
4
I CE = 4.0A
I CE = 8.0A
I CE = 16A
I CE = 4.0A
I CE = 8.0A
I CE = 16A
CE
CE
vs. V
15
15
vs. V
6
GE
GE
20
20
8
80
70
60
50
40
30
20
10
20
18
16
14
12
10
35
30
25
20
15
10
0
5
0
8
6
4
2
0
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 12 - Typ. Transfer Characteristics
0.0
0
5
Fig. 10 - Typical V
-40°C
25°C
175°C
V
1.0
CE
10
= 50V; tp = 10µs
5
T
J
tp = 80µs
T J = 25°C
T J = 175°C
V GE (V)
V GE (V)
V F (V)
= 25°C
2.0
I CE = 4.0A
I CE = 8.0A
I CE = 16A
CE
10
15
vs. V
3.0
GE
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4.0
15
20