IRG4BC10UDPBF International Rectifier, IRG4BC10UDPBF Datasheet - Page 3
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IRG4BC10UDPBF
Manufacturer Part Number
IRG4BC10UDPBF
Description
IGBT N-CH DIO 600V 8.5A TO220AB
Manufacturer
International Rectifier
Specifications of IRG4BC10UDPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 5A
Current - Collector (ic) (max)
8.5A
Power - Max
38W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
8.5A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
38W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4BC10UDPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4BC10UDPBF
Manufacturer:
CET
Quantity:
40 000
www.irf.com
100
0.1
10
1
7
6
5
4
3
2
1
0
0.1
1
Square wave:
V
CE
, Collector-to-Emitter Voltage (V)
60% of rated
T = 25 C
J
Ideal diodes
I
voltage
o
V
20µs PULSE WIDTH
GE
= 15V
T = 150 C
J
1
o
10
f, Frequency (KHz)
RMS
100
10
1
5
T = 150 C
J
6
V
GE
10
o
7
, Gate-to-Emitter Voltage (V)
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation =
T = 25 C
J
sink
8
J
= 90°C
9
o
10
V
5µs PULSE WIDTH
CC
11
= 50V
W
12
13
100
14
3