IRG4BH20K-SPBF International Rectifier, IRG4BH20K-SPBF Datasheet

IGBT UFAST 1200V 11A D2PAK

IRG4BH20K-SPBF

Manufacturer Part Number
IRG4BH20K-SPBF
Description
IGBT UFAST 1200V 11A D2PAK
Manufacturer
International Rectifier
Type
Ultrafastr
Datasheets

Specifications of IRG4BH20K-SPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4.3V @ 15V, 5A
Current - Collector (ic) (max)
11A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Capacitance, Gate
435 pF
Current, Collector
11 A
Energy Rating
130 mJ
Package Type
D2Pak
Polarity
N-Channel
Power Dissipation
60 W
Resistance, Thermal, Junction To Case
2.1 °C/W
Speed, Switching
4 to 20 kHz
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
4.04 V
Dc Collector Current
11A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
60W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Other names
*IRG4BH20K-SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BH20K-SPBF
Manufacturer:
IR
Quantity:
3 000
INSULATED GATE BIPOLAR TRANSISTOR
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Latest generation design provides tighter parameter
• Industry standard D
• As a Freewheeling Diode we recommend our
• Latest generation 4 IGBT's offer highest power
R
R
R
Wt
V
I
I
I
I
t
V
E
P
P
T
T
V
C
C
CM
LM
sc
t
HEXFRED
Diode and IGBT
minimum EMI / Noise and switching losses in the
switching speed
distribution and higher efficiency than previous
generations
density motor controls possible
CES
GE
ARV
J
STG
sc
D
D
JA
GE
@ T
@ T
JC
CS
@ T
@ T
=10µs @ V
= 15V
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
TM
ultrafast, ultrasoft recovery diodes for
CC
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
= 720V , T
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
2
Pak package
Parameter
J
Parameter
= 125°C,

G
n-channel
6 (0.21)
IRG4BH20K-S
Typ.
0.24
–––
–––
E
C
-55 to +150
D
Max.
1200
±20
130
5.0
11
22
22
10
60
24
2
Pak
Short Circuit Rated
V
@V
CE(on) typ.
V
Max.
GE
UltraFast IGBT
–––
–––
2.1
CES
40
= 15V, I
PD -93960
= 1200V
= 3.17V
C
= 5.0A
Units
g (oz)
°C/W
Units
mJ
µs
°C
W
V
A
V
1
8/17/00

Related parts for IRG4BH20K-SPBF

IRG4BH20K-SPBF Summary of contents

Page 1

... Storage Temperature Range STG Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4BH20K n-channel  ‚ -55 to +150 Typ. ––– 0.24 ––– 6 (0.21) PD -93960 Short Circuit Rated UltraFast IGBT ...

Page 2

... IRG4BH20K-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage „ V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES ...

Page 3

... Duty cycle: 50 125˚ 90˚ C sink Gate drive as specified Power Dissipation = 15W (Load Current = I of fundamental) RMS 100 10 = 15V Fig Typical Transfer Characteristics IRG4BH20K-S Triangular wave: Clamp voltage: 80% of rated ° 150 C J ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) ...

Page 4

... IRG4BH20K 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 -60 -40 -20 125 ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com 400V CC C SHORTED I = 11A 100 0 Fig Typical Gate Charge vs 0 -60 -40 -20 Fig Typical Switching Losses vs. IRG4BH20K Total Gate Charge (nC) G Gate-to-Emitter Voltage = 50Ohm = 15V = 960V 2 100 120 140 160 ° Junction Temperature ( Junction Temperature ( ° ...

Page 6

... IRG4BH20K-S 5 50Ohm 150 C ° 960V 15V 4.0 GE 3.0 2.0 1.0 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 100 V = 20V 125 SAFE OPERATING AREA Fig Turn-Off SOA o 10 100 1000 10000 , Collector-to-Emitter Voltage (V) www.irf.com ...

Page 7

... V C 90% 10 www.irf.com 960V ‚ Fig. 13b - . ‚ ƒ t=5µ IRG4BH20K-S 960V 25° 480µF 960V Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 960V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BH20K Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1 1.7 8 (.0 70) 1.2 7 (.0 50 1.4 0 (.0 55 1.1 4 (.0 45) 5 .08 (. & . LIN & Pak Tape and Reel (. (. TIO N 330.00 (14.1 73 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords