IXGQ20N120B IXYS, IXGQ20N120B Datasheet - Page 5

• Manufacturer Part Number: IXGQ20N120B
• Description: IGBT 40A 1200V TO-3P
• Manufacturer: IXYS

Specifications of IXGQ20N120B

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3P
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 20
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 160
• Eoff, Typ, Tj=125°c, Igbt, (mj): 3.5
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
500
450
400
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100
1.0
0.1
10
0.5
25
0
1
t
t
R
V
V
Sw itching Tim e on Tem perature
d(off)
fi
35
Fig. 13. Dependence of Turn-off
GE
CE
G
f = 1 MHz
5
- - - - - -
= 10Ω
= 960V
= 15V
45
Fig. 15. Capacitance
T
10
J
I
C
55
- Degrees Centigrade
= 20A
15
V
65
C E
75
20
- Volts
I
85
Fig. 16. Maxim um Transient Therm al Resistance
C
25
= 40A
95
30
C
C
C
ies
oes
res
105 115 125
10
I
I
C
C
= 40A
= 10A
35
Pulse Width - milliseconds
40
15
12
9
6
3
0
0
V
I
I
C
G
CE
= 20A
= 1 0mA
10
= 600V
100
Fig. 14. Gate Charge
20
Q
G
- nanoCoulombs
30
IXGQ 20N120BD1
40
IXGQ 20N120B
50
60
1000
70