IXGP28N120B IXYS, IXGP28N120B Datasheet
IXGP28N120B
Specifications of IXGP28N120B
Related parts for IXGP28N120B
IXGP28N120B Summary of contents
Page 1
... V GE(th CES CE CES GE = ± GES 28A CE(sat © 2003 IXYS All rights reserved IXGP 28N120B Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 150 = 5 Ω 0.8 V 250 -55 ... +150 150 -55 ... +150 300 (TO-220) 0.55/5Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... CES G off fi E off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ 2700 170 ...
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... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 56A C 28A 14A Volts G E © 2003 IXYS All rights reserved 270 240 210 180 9V 150 120 2.5 3 3.5 4 1.3 1.2 1.1 9V 1.0 7V 0.9 0.8 0.7 5V 0.6 2.5 3 3.5 4 100 T = 25º ...
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... T = 125º 15V GE 1000 V = 960V CE 800 600 I = 14A C 400 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 100 25º 700 600 500 ...
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... T - Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.00 0.50 0.10 1 © 2003 IXYS All rights reserved I = 14A 56A 14A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGP 28N120B Fig. 14. Gate Charge ...