IXGH28N60B IXYS, IXGH28N60B Datasheet - Page 4

• Manufacturer Part Number: IXGH28N60B
• Description: IGBT 40A 600V TO-247AD
• Manufacturer: IXYS

Specifications of IXGH28N60B

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 28A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): 28
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 200
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1200
1100
1000
900
800
700
600
500
400
300
200
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
35
30
25
20
15
10
5
0
10
10
0
I
C
T
= 14A
J
Fig. 11. Dependence of Sw itching
t
t
T
V
V
R
R
V
V
T
d(off)
fi
= -40ºC
J
10
J
GE
CE
GE
CE
30
125ºC
G
G
Fig. 9. Dependence of E
= 125ºC
= 125ºC
-
Fig. 7. Transconductance
25ºC
T
= 10Ω
= 82Ω - - - -
= 480V
= 480V
= 15V
= 15V
J
- - - - -
20
= 125ºC
20
50
30
R
I
Tim e on R
I
C
30
C
G
T
70
- Amperes
I
J
- Amperes
C
- Ohms
40
= 25ºC
= 28A
90
50
40
G
I
C
60
= 56A
110
off
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
on I
70
50
130
C
80
150
90
60
10.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
600
550
500
450
400
350
300
250
200
150
25
10
10
R
R
V
V
35
Fig. 12. Dependence of Sw itching
T
T
V
V
GE
CE
G
G
J
J
Fig. 8. Dependence of E
GE
CE
30
= 25ºC
= 10Ω
= 82Ω - - - -
= 125ºC
= 480V
Fig. 10. Dependence of E
= 15V
45
= 480V
= 15V
20
T
t
t
R
V
V
J
d(off)
fi
50
55
GE
CE
G
- Degrees Centigrade
- - - - - -
= 10Ω
= 480V
= 15V
Tem perature
Tim e on I
R
I
65
C
30
70
G
- Amperes
- Ohms
75
I
C
I
I
90
C
C
= 56A
85
T
IXGH 28N60B
IXGT 28N60B
= 28A
= 14A
C
40
J
= 125ºC
I
I
I
95
110
C
C
C
off
= 14A
= 56A
= 28A
on R
off
105 115 125
50
on
130
6,534,343
G
150
60