IRG4PH20KPBF International Rectifier, IRG4PH20KPBF Datasheet

IGBT UFAST 1200V 11A TO247AC

IRG4PH20KPBF

Manufacturer Part Number
IRG4PH20KPBF
Description
IGBT UFAST 1200V 11A TO247AC
Manufacturer
International Rectifier
Datasheets
1.IRG4PH20KPBF.pdf (9 pages)
2.IRG4PH20K.pdf (9 pages)

Specifications of IRG4PH20KPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4.3V @ 15V, 5A
Current - Collector (ic) (max)
11A
Power - Max
60W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Type
IGBT
Dc Collector Current
11A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
60W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4PH20KPBF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Benefits
Thermal Resistance
www.irf.com
Absolute Maximum Ratings
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Latest generation design provides tighter parameter
• As a Freewheeling Diode we recommend our
• Latest generation 4 IGBT's offer highest power
V
I
I
I
I
t
V
E
P
P
T
T
R
R
R
Wt
C
C
LM
sc
V
CM
t
HEXFRED
Diode and IGBT
minimum EMI / Noise and switching losses in the
switching speed
distribution and higher efficiency than previous
generations
density motor controls possible
GE
STG
CES
ARV
D
D
J
sc
JA
GE
@ T
@ T
JC
CS
@ T
@ T
=10µs, V
= 15V
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
TM
CC
ultrafast, ultrasoft recovery diodes for
= 720V , T
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
J
= 125°C,
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case)
6 (0.21)
Typ.
0.24
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to +150
IRG4PH20K
TO-247AC
Max.
1200
±20
130
5.0
22
22
10
11
60
24
Short Circuit Rated
V
@V
CE(on) typ.
V
Max.
GE
UltraFast IGBT
–––
–––
2.1
CES
40
= 15V, I
PD -91776
= 1200V
= 3.17V
C
= 5.0A
Units
g (oz)
°C/W
Units
mJ
µs
°C
W
V
A
V
1
6/25/98

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IRG4PH20KPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, t =10µ 720V , T = 125° 15V GE • Combines low conduction losses with high switching speed • ...

Page 2

IRG4PH20K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature ...

Page 3

Sq uare wav e: 60% of rated voltage Ideal diodes Fig Typical Load Current vs. Frequency 100 10 ° 150 ° 20µs PULSE WIDTH 0.1 1 ...

Page 4

IRG4PH20K 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL ...

Page 5

1MHz ies res oes ce gc 600 C ies 400 200 C oes C res 0 ...

Page 6

IRG4PH20K 5 50Ohm 150 C ° 960V 15V 4.0 GE 3.0 2.0 1.0 0 Collector Current (A) C Fig Typical Switching ...

Page 7

50V 100 river sam e type 80% of Vce(m ax ote the 50V pow er supply, pulse w idth and inductor w ...

Page 8

IRG4PH20K Case Outline and Dimensions — TO-247AC 15 .90 (. . ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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