IXGT30N60B2 IXYS, IXGT30N60B2 Datasheet - Page 3

• Manufacturer Part Number: IXGT30N60B2
• Description: IGBT 600V 70A TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT30N60B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 24A
• Current - Collector (ic) (max): 70A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 70
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 82
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4.2
3.9
3.6
3.3
2.7
2.4
2.1
1.8
1.5
1.2
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
3
0.5
0.5
5
Fig. 5. Collector-to-Em itter Voltage
6
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
7
vs. Gate-to-Em itter voltage
1
1
8
I
C
= 48A
9
V
V
V
@ 125 Deg. C
24A
12A
GE
GE
@ 25 Deg. C
1.5
C E
1.5
V
V
10 11
G E
= 15V
= 15V
CE
- Volts
13V
11V
13V
11V
- Volts
- Volts
12 13 14 15 16 17
2
2
T
J
5V
9V
7V
= 25ºC
2.5
7V
5V
2.5
9V
3
3
300
250
200
150
100
250
225
200
175
150
125
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
75
50
25
0
0
Fig. 2. Extended Output Characteristics
-50
0
4
V
Fig. 4. Dependence of V
-25
2
GE
5
Fig. 6. Input Adm ittance
= 15V
4
6
0
T
J
- Degrees Centigrade
Tem perature
@ 25 deg. C
6
7
25
V
V
G E
C E
8
8
T
- Volts
50
- Volts
I
J
C
= -40ºC
10
I
= 12A
IXGH 30N60B2
IXGT 30N60B2
C
9
125ºC
V
= 24A
I
25ºC
C
GE
75
= 48A
12
10
= 15V
CE(sat)
13V
11V
9V
100
7V
5V
14
11
on
125
16
12
18
150
13