IRG4BC30SPBF International Rectifier, IRG4BC30SPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4BC30SPBF
• Description: IGBT STD 600V 34A TO220AB
• Manufacturer: International Rectifier

Specifications of IRG4BC30SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 18A
• Current - Collector (ic) (max): 34A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 34A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4BC30SPBF

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Fig. 9 - Typical Switching Losses vs. Gate
3.80
3.76
3.72
3.68
3.64
3.60
2000
1500
1000
500
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 480V
= 15V
= 25 C
= 18A
R
V
10
G
CE
°

V
C
C
C
, Gate Resistance (Ohm)
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=

C ies
C oes
C res
20
0V,
C
C
C


ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
Ω
SHORTED
40
50
100
100
0.1
10
1
20
16
12
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
8
4
0

R
V
V
0

GE
CC
Fig. 8 - Typical Gate Charge vs.
V
G
I
CC
C
= 23Ohm
= 15V
= 480V
= 400V
= 18A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
10
J
Q , Total Gate Charge (nC)
G
Ω
0
20
20
IRG4BC30S
40
30
60
80 100 120 140 160
40

I =

I =

I =
C
C
C
°
50
9.0 A
36
18
9
A
A
A
5
60