IXGH31N60 IXYS, IXGH31N60 Datasheet
IXGH31N60
Manufacturer Part Number
IXGH31N60
Description
IGBT 60A 600V TO-247AD
Manufacturer
IXYS
Datasheet
1.IXGH31N60.pdf
(2 pages)
Specifications of IXGH31N60
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 31A
Current - Collector (ic) (max)
60A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
31
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
400
Eoff, Typ, Tj=125°c, Igbt, (mj)
12
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH31N60
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGH31N60D1
Manufacturer:
SANYO
Quantity:
5 620
Company:
Part Number:
IXGH31N60U1
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
Ultra-Low V
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
CES
GES
C25
C90
CM
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GEM
C
GES
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
T
Mounting torque (M3) TO-247
C
C
C
C
C
C
C
CE
GE
CE
J
J
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 mA, V
= 250 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
CE(sat)
, V
GE
GE
VJ
CES
= 15 V
= 125°C, R
= ±20 V
GE
CE
IGBT
= 0 V
= V
GE
GE
TO-247
TO-268
= 1 MW
G
= 10 W
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
min.
600
2.5
IXGH 31N60
IXGT 31N60
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
I
1.13/10 Nm/lb.in.
CM
= 62
600
600
±20
±30
150
150
300
CES
60
31
80
max.
6
4
±100
100
500
5.5
1.7
mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
g
g
TO-247 AD
TO-268
G = Gate,
E = Emitter,
Features
• International standard package
• Low V
• High current handling capability
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with 1 screw
• Low losses, high efficiency
• High power density
V
I
V
C25
- for minimum on-state conduction
losses
- drive simplicity
power supplies
(isolated mounting screw hole)
CES
CE(sat)
CE(sat)
G
C
E
G
E
= 600 V
= 60 A
= 1.7 V
C = Collector,
TAB = Collector
92795G (7/00)
(TAB)
(TAB)
1 - 2
Related parts for IXGH31N60
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXGH31N60 Summary of contents
Page 1
... V = 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 31N60 IXGT 31N60 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 0.8 V CES 150 -55 ... +150 150 -55 ... +150 1 ...
Page 2
... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 31N60 IXGT 31N60 TO-247 AD (IXFH) Outline 100 nC ...