IXGQ28N120B IXYS, IXGQ28N120B Datasheet
IXGQ28N120B
Specifications of IXGQ28N120B
Related parts for IXGQ28N120B
IXGQ28N120B Summary of contents
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... 25°C CES CE CES ± GES 28A CE(sat Note 2 © 2003 IXYS All rights reserved IXGQ 28N120B IXGQ 28N120BD1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 150 = 10 Ω @0.8 V CES 250 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... Switching times may increase for V higher T or increased Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... T = 25º IXGQ28N120B IXGQ 28N120BD1 Fig. 2. Extended Output Characte ristics @ 17V GE 15V 13V 11V Volts C E Fig pende nce of V CE(sat) Tem perature V = 15V 100 T - Degrees Centigrade J Fig. 6. Input Adm ittance T = 125º ...
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... T = 25º 700 600 500 400 300 I = 56A I = 28A C C 200 100 100 4,850,072 4,931,844 5,034,796 5,063,307 4,835,592 4,881,106 5,017,508 5,049,961 IXGQ28N120B IXGQ 28N120BD1 Fig. 8. Dependence of Turn-off Ene rgy Loss 125º 15V 960V Ohms G Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature R = 5Ω ...
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... C E 1.00 0.50 0.10 1 © 2003 IXYS All rights reserved I = 14A 56A 14A 105 115 125 C ies C oes C res Fig. 16. Maxim um Trans ient Therm al Res istance 10 Pulse Width - milliseconds IXGQ 28N120B IXGQ28N120BD1 Fig. 14. Gate Charge 600V 28A 0mA nanoCoulombs G 100 100 ...
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... 110 100 90 0 200 400 600 800 A/µs -di /dt F Fig. 21 Recovery time t versus - 0.01 0.1 t 4,850,072 4,931,844 5,034,796 5,063,307 4,835,592 4,881,106 5,017,508 5,049,961 IXGQ 28N120B IXGQ28N120BD1 100° 600V 20A 10A 1000 0 200 400 600 Fig. 19 Peak reverse current I r versus -di ...