IXGH30N60C2D1 IXYS, IXGH30N60C2D1 Datasheet - Page 6

• Manufacturer Part Number: IXGH30N60C2D1
• Description: IGBT 600V 70A FRD TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH30N60C2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 24A
• Current - Collector (ic) (max): 70A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 70
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 32
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.4
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 20. Dynamic parameters Q
Fig. 17. Forward current I
Fig. 20. Dynamic parameters Q
Z
Fig. 23. Transient thermal resistance junction to case
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
VJ
=100°C
=150°C
40
1
I
RM
Q
r
0.0001
80
2
T
VJ
T
V
120
VJ
F
F
=25°C
versus V
3
°C
0.001
r
, I
V
r
160
, I
RM
RM
F
t
Q
rr
1000
Fig. 18. Reverse recovery charge
Fig. 21. Recovery time t
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
VJ
= 100°C
200
I
I
F
F
400
= 60A
= 30A
I
I
0.1
F
F
= 60A
= 30A
-di
600
F
-di
/dt
T
VJ
t
F
/dt
= 100°C
A/µs
rr
s
800
A/µs
DSEP 29-06
versus
1000
1000
1
I
V
RM
FR
Fig. 19. Peak reverse current I
Constants for Z
30
25
20
15
10
20
15
10
Fig. 22. Peak forward voltage V
A
5
0
V
5
0
1
2
0
0
i
T
t
T
fr
VJ
VJ
= 100°C
= 100°C
200
200
IXGH 30N60C2D1
IXGT 30N60C2D1
I
I
F
F
R
0.502
0.193
= 60A
= 30A
400
400
thi
thJC
(K/W)
V
FR
calculation:
600
600
di
-di
F
/dt
F
/dt
A/µs
A/µs
800
800
t
0.0052
0.0003
i
(s)
1000
1000
RM
1.00
0.75
0.50
0.25
0.00
µs
FR
t
fr