IXGH36N60B3D1 IXYS, IXGH36N60B3D1 Datasheet - Page 4

• Manufacturer Part Number: IXGH36N60B3D1
• Description: IGBT 200A 600V TO-247AD
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH36N60B3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 36A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 200
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 36
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.5
• Rthjc, Max, Igbt, (°c/w): 0.5
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
90
80
70
60
50
40
30
20
10
10
0.00001
0
0
0
f
= 1 MHz
30
5
Fig. 7. Transconductance
60
10
Fig. 9. Capacitance
0.0001
90
I
15
C
- Amperes
V
CE
120
- Volts
20
150
Fig. 11. Maximum Transient Thermal Impedance
25
C oes
C res
T
C ies
0.001
180
J
30
= - 40ºC
125ºC
25ºC
210
35
Pulse Width - Seconds
240
40
0.01
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
150
V
I
I
T
R
dV / dt < 10V / ns
C
G
J
CE
G
10
= 125ºC
= 30A
= 10mA
= 5
= 300V
200
Ω
20
0.1
250
Fig. 8. Gate Charge
30
Q
300
IXGH36N60B3D1
G
V
- NanoCoulombs
CE
350
40
- Volts
400
50
450
1
60
500
70
IXYS REF: G_36N60B3(55) 5-05-08-C
550
80
600
10
650
90